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2SJ399
Silicon P-Channel MOS FET
REJ03G0193-0200Z (Previous ADE-208-267 (Z) ) Rev.2.00 Apr.05.2004
Application
Low frequency power switching
Features
* * * * * Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
Note:
Marking is "ZF-"
Rev.2.00, Apr.05.2004, page 1 of 5
2SJ399
Absolute Maximum Ratings
(Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: PW 100 s, duty cycle 10% Symbol VDSS VGSS ID ID(pulse)Note IDR Pch Tch Tstg Ratings -30 20 -0.2 -0.4 -0.2 150 150 -55 to +150 Unit V V A A A mW C C
Electrical Characteristics
(Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Min -30 20 -- -- -1.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.7 2.0 1.1 22.3 0.17 530 2170 7640 7690 Max -- -- 2 -1 -2.0 7.5 7.0 -- -- -- -- -- -- -- Unit V V A A V pF pF pF ns ns ns ns Test Conditions ID = -100 A, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 ID = -10 A, VDS = -5 V ID = -20 mA, VGS = -4 V ID = -10 mA, VGS = -10 V VDS = -10 V VGS = 0 f = 1 MHz ID = -0.1 A VGS = -10 V RL = 100 PW = 5 s
Rev.2.00, Apr.05.2004, page 2 of 5
2SJ399
Main Characteristics
Pch (mW)
Maximum Channel Dissipation Curve 200
-1
Maximum Safe Operation Area 1 ms
I D (A)
-0.3 -0.1
= s PW0 m 1
150
Channel Power Dissipation
Drain Current
C D
100
n tio ra pe O
-0.03 -0.01
50
Operation in this area is limited by R DS(on)
-0.003
Ta = 25 C 0 50 100 150 Ta (C) 200
-0.001 -0.1 -0.3 -1 -3 -10 -30 -100
Ambient Temperature
Drain to Source Voltage
V DS (V)
Typical Output Characteristics -2.0 Pulse Test -0.5
Typical Transfer Characteristics V DS = -10 V
I D (A)
-5 V
-1.2
ID Drain Current
(A)
-1.6
-0.4
-4.5 V
-0.3
Drain Current
-4 V
-0.8
-3.5 V
-3 V
-0.2
75 C 25 C
Ta = -25 C
-0.4
-0.1
-2.5 V VGS = -2 V
0
-2 -4 -6 Drain to Source Voltage
-8 -10 V DS (V)
0
-1 -2 -3 Gate to Source Voltage
-4 -5 V GS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
-0.4
Drain to Source On State Resistance R DS(on) ( )
-0.5
Drain to Source Saturation Voltage V DS(on) (V)
Static Drain to Source on State Resistance vs. Drain Current 100 Ta = 25 C 50 Pulse Test 20 10 5 VGS = -4 V 2 1
-0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1
-0.3
-0.2 A
-0.2 -0.1 A -0.1 I D = -0.05 A
-10 V
0
-4 -8 -12 Gate to Source Voltage
-16 -20 V GS (V)
Drain Current
I D (A)
Rev.2.00, Apr.05.2004, page 3 of 5
2SJ399
Static Drain to Source on State Resistance vs. Temperature 5 I D = -0.2 A -0.05 A -0.1 A V GS = -4 V I D = -0.2 A 2 VGS = -10 V -0.1 A -0.05 A Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance R DS(on) ( )
1 0.5 Ta = -25 C 0.2 0.1 25 C 75 C
4
3
0.05 0.02 0.01
-0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1
1 0 -40
V DS = -10 V Pulse Test
0 40 80 120 160 Case Temperature Tc (C) Typical Capacitance vs. Drain to Source Voltage
Drain Current I D (A)
Switching Characteristics
10000 5000
100 50
Capacitance C (pF)
tf t d(off) tr t d(on)
20 10 5 2 1 0.5 0.2 0.1 0 -10
Switching Time t (ns)
Coss
2000 1000 500
Ciss
Crss -20 -30
VGS = 0 f = 1 MHz -40 -50
200 100
VGS = -10 V PW = 5 s -0.2 -0.5 -1 -2 Drain Current I D (A) -5
-0.1
Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage -0.5
Reverse Drain Current I DR (A)
Pulse Test -0.4 -10 V -0.3 V GS = 0 -0.2 -5 V
-0.1
0
-0.4
-0.8
-1.2
-1.6
-2.0
Source to Drain Voltage
V SD (V)
Rev.2.00, Apr.05.2004, page 4 of 5
2SJ399
Package Dimensions
As of January, 2003
Unit: mm
0.65
0.10 0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
0.3
+ 0.2 1.1 - 0.1
0.65
2.8
Package Code JEDEC JEITA Mass (reference value)
MPAK(T) -- Conforms 0.011 g
Ordering Information
Part Name 2SJ399 Quantity 3000 pcs Shipping Container 178 mm Taping Reel (TL)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00, Apr.05.2004, page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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